Paper Titles

Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models
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Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen
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Strain and Gettering in Epitaxial Silicon Wafers
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Strain in Silicon below Si₃N₄ Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements
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Defects Produced in Silicon by Reactive Ion Etching
p.371

Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
p.377

Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si
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Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers
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Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Defects Produced in Silicon by Reactive Ion...

Defects Produced in Silicon by Reactive Ion Etching

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

371-376

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.371

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Online since:

July 1997

Authors:

H.B. Erzgräber, H.H. Richter, M.-A. Aminpur, A. Wolff, K. Blum

Keywords:

Annealing Procedures, Broadband Luminescence, Etch Plasma, Excitonic Defect Complex, Photoluminescence (PL), Reactive Ion Etching, Residual Damage

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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