Paper Titles

Yield Analysis of CMOS Ics
p.327

The Role of Grown-in Defects in Advanced Silicon Technology
p.337

Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models
p.343

Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen
p.349

Strain and Gettering in Epitaxial Silicon Wafers
p.355

Strain in Silicon below Si₃N₄ Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements
p.365

Defects Produced in Silicon by Reactive Ion Etching
p.371

Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
p.377

Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si
p.383

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Strain and Gettering in Epitaxial Silicon Wafers

Strain and Gettering in Epitaxial Silicon Wafers

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VII

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

355-364

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.355

Citation:

Cite this paper

Online since:

July 1997

Authors:

F.G. Kirscht, Mohammad B. Shabani, T. Yoshimi, Sang Bae Kim, B. Snegirev, Cheng Ming Wang, L. Williamson, K. Takashima, P. Taylor, D. Lange

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: