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Defects Produced in Silicon by Reactive Ion Etching
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Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
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Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si
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Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers
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Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
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Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Hydrogen Stimulated Destruction of Fe-B Pairs in...

Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

383-386

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.383

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Online since:

July 1997

Authors:

Eugene B. Yakimov, A.L. Parakhonsky

Keywords:

Deep Level, Defect Passivation, Hydrogen, Iron, Iron-Boron Pairs, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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