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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Differential Interference Contrast Microscopy of...

Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.387

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Online since:

July 1997

Authors:

M.-A. Trauwaert, Jan Vanhellemont, U. Lambert, D. Gräf, Karine Kenis, Paul W. Mertens, Marc Heyns

Keywords:

Anneal, Contrast Microscopy, Grown-in Defects, Interference, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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