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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Ge Concentration Effect on the Dislocation...

Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

419-424

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.419

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Online since:

July 1997

Authors:

Yu.L. Iunin, Valeri I. Orlov, D.V. Dyachenko-Dekov, Nikolay V. Abrosimov, S.N. Rossolenko, W. Schröder

Keywords:

Dislocation Mobility, Point Defect, SiGe Alloys

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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