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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Formation of Grown-in Defects in CZ-Si Crystals

Formation of Grown-in Defects in CZ-Si Crystals

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

449-458

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.449

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Online since:

July 1997

Authors:

Mitsuhiro Hasebe, Katsuhiko Nakai, Wataru Ohashi, Y. Ikematsu, T. Mizutani, T. Iwasaki

Keywords:

Crystal Cooling Condition, Crystal Originated Particles (COP), Czochralski, Dislocation Loops, Gate-Oxide Integrity GOI, Grown-in Defects, Optical Precipitate Profiler (OPP), Oxygen Precipitates, Point Defect, Self-Interstitial, Silicon, Vacancy, Void, X-Ray Topography Transmission Electron Microscopy (TEM)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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