Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

477-482

DOI:

10.4028/www.scientific.net/SSP.57-58.477

Citation:

A. Czerwinski et al., "Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes", Solid State Phenomena, Vols. 57-58, pp. 477-482, 1997

Online since:

July 1997

Keywords:

Export:

Price:

$35.00

In order to see related information, you need to Login.