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X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon
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Peculiarities of Raman Spectra and Real Structure of Ge_1-xSi_x Solid Solution
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Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model)
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Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes
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An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
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Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
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Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
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Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Improved Extraction of Si Substrate Parameters...

Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

477-482

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.477

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Online since:

July 1997

Authors:

A. Czerwinski, Eddy Simoen, Jan Vanhellemont, Daniel Tomaszewski, J. Gibki, A. Bakowski

Keywords:

Diode, P-N Junction, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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