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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58X-Ray Diffractometry and Admittance Spectroscopy...

X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

459-464

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.459

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Online since:

July 1997

Authors:

P. Zaumseil, S. Kar

Keywords:

Admittance Spectroscopy, Gate-Oxide, Ion Damage, Ion Implantation, MOS Structure, SiO₂ Precipitation, Strain Profile, Triple Crystal Diffractometry

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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