X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon

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Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

459-464

DOI:

10.4028/www.scientific.net/SSP.57-58.459

Citation:

P. Zaumseil and S. Kar, "X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon", Solid State Phenomena, Vols. 57-58, pp. 459-464, 1997

Online since:

July 1997

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