X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon
p.459
p.459
Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution
p.465
p.465
Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model)
p.471
p.471
Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes
p.477
p.477
An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
p.483
p.483
Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
p.489
p.489
Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
p.495
p.495
Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films
p.501
p.501
Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates
p.507
p.507
An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
Abstract:
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Periodical:
Solid State Phenomena (Volumes 57-58)
Pages:
483-488
Citation:
Online since:
July 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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