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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Capacitance Spectroscopy of Thin GaAs Layers Grown...

Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

495-500

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.495

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Online since:

July 1997

Authors:

V.V. Chaldyshev, P.N. Brounkov, A.A. Suvorova, S.G. Konnikov, V.V. Preobrazhenski, M.A. Putyato, B.R. Semyagin

Keywords:

Capacitance Spectroscopy, LT-GaAs

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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