Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures

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Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

495-500

DOI:

10.4028/www.scientific.net/SSP.57-58.495

Citation:

V.V. Chaldyshev et al., "Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures", Solid State Phenomena, Vols. 57-58, pp. 495-500, 1997

Online since:

July 1997

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$35.00

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