Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes
p.477
p.477
An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
p.483
p.483
Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
p.489
p.489
Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
p.495
p.495
Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films
p.501
p.501
Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates
p.507
p.507
A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries
p.513
p.513
New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)
p.519
p.519
Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions
p.525
p.525
A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries
Abstract:
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Periodical:
Solid State Phenomena (Volumes 57-58)
Pages:
513-518
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Online since:
July 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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