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A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58New Possibility of Impurities Express...

New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

519-524

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.519

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Online since:

July 1997

Authors:

T.M. Tkacheva, G.N. Petrov, D.V. Vlasov

Keywords:

Cz-Si Heavily Doped with Ge, Ge Striated Distribution, Internal Elastic Stresses, Laser Element Spark-Analyzer (LESA), X-Ray Topography

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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