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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Depth Dependence of Dislocation Loop Dissolution...

Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

377-382

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.377

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Online since:

July 1997

Authors:

Michael Seibt, Yue Long Huang, B. Plikat

Keywords:

End-of Range Defects, Ion Implantation, Ostwald Ripening, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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