Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

539-546

DOI:

10.4028/www.scientific.net/SSP.6-7.539

Citation:

D. Ballutaud and M. Aucouturier, "Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study", Solid State Phenomena, Vols. 6-7, pp. 539-546, 1989

Online since:

January 1989

Export:

Price:

$35.00

In order to see related information, you need to Login.