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Silicon-on-Insulator Technology by Si-MBE
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Defect Microchemistry at the Si/SiO₂ Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study
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Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure
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Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors
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Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Microchemistry at the Si/SiO2 Interface...

Defect Microchemistry at the Si/SiO₂ Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

539-546

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.539

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Online since:

January 1989

Authors:

D. Ballutaud, M. Aucouturier

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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