Paper Titles

Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure
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Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors
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SOI by Silicon Dioxide Thermal Bonding
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Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions
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Strain and Critical Thickness of MBE Grown CaF₂-Insulators on Si(111)
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Defect Control in Thick SOI-Films Produced by Zone Melting Recrystallization
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Defects and Their Influence on Parasitic Devices in Integrated Circuits
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Formation and Structure of Iron-Impurity Complexes in Silicon
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Defect Formation in Dislocation-Free Silicon Containing Oxygen
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defects and Their Influence on Parasitic Devices...

Defects and Their Influence on Parasitic Devices in Integrated Circuits

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

585-590

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.585

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Online since:

January 1989

Authors:

R. Prejdova

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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