Defect Formation in Dislocation-Free Silicon Containing Oxygen

Abstract:

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Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

603-0

DOI:

10.4028/www.scientific.net/SSP.6-7.603

Citation:

M.G. Mil'vidskii et al., "Defect Formation in Dislocation-Free Silicon Containing Oxygen", Solid State Phenomena, Vols. 6-7, pp. 603-0, 1989

Online since:

January 1989

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Price:

$35.00

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