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LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
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Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
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SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
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Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
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Ion Beam Induced Luminescence
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Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
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Cathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection Efficiency
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Cathodoluminescence Study on ZnO and GaN
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Minority Carrier Diffusion Length in AlGaN: A...

Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

139-146

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.139

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Online since:

December 1998

Authors:

A. Cremades, M. Albrecht, Axel Voigt, J. Krinke, R. Dimitrov, Oliver Ambacher, M. Stutzmann

Keywords:

AlGaN, Alloy, Diffusion Length, EBIC, Minority Carriers, Si Doping, Structural Defects, TEM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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