Monte Carlo Simulation of the Recombination Contrast of Dislocations
p.89
p.89
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
p.97
p.97
Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
p.105
p.105
LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
p.115
p.115
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
p.123
p.123
SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
p.131
p.131
Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
p.139
p.139
Ion Beam Induced Luminescence
p.147
p.147
Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
p.151
p.151
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
Abstract:
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Periodical:
Solid State Phenomena (Volumes 63-64)
Pages:
123-130
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Online since:
December 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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