Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

123-130

DOI:

10.4028/www.scientific.net/SSP.63-64.123

Citation:

S. Spadoni et al., "Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration", Solid State Phenomena, Vols. 63-64, pp. 123-130, 1998

Online since:

December 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.