Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
p.61
p.61
Characterization of Laser Structures by EBIC Measurements and Simulation
p.69
p.69
Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
p.77
p.77
Monte Carlo Simulation of the Recombination Contrast of Dislocations
p.89
p.89
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
p.97
p.97
Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
p.105
p.105
LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
p.115
p.115
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
p.123
p.123
SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
p.131
p.131
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 63-64)
Pages:
97-104
Citation:
Online since:
December 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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