Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

61-68

DOI:

10.4028/www.scientific.net/SSP.63-64.61

Citation:

O.V. Kononchuk et al., "Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers", Solid State Phenomena, Vols. 63-64, pp. 61-68, 1998

Online since:

December 1998

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$35.00

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