EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
p.25
p.25
Laser Induced Mapping for Separation of Bulk and Surface Recombination
p.33
p.33
Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
p.45
p.45
Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
p.53
p.53
Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
p.61
p.61
Characterization of Laser Structures by EBIC Measurements and Simulation
p.69
p.69
Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
p.77
p.77
Monte Carlo Simulation of the Recombination Contrast of Dislocations
p.89
p.89
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
p.97
p.97
Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
Abstract:
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Periodical:
Solid State Phenomena (Volumes 63-64)
Pages:
61-68
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Online since:
December 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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