Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

77-88

DOI:

10.4028/www.scientific.net/SSP.63-64.77

Citation:

M. Kittler and J. Lärz, "Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC", Solid State Phenomena, Vols. 63-64, pp. 77-88, 1998

Online since:

December 1998

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$35.00

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