EBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs Heterostructures
p.13
p.13
EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
p.25
p.25
Laser Induced Mapping for Separation of Bulk and Surface Recombination
p.33
p.33
Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
p.45
p.45
Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
p.53
p.53
Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
p.61
p.61
Characterization of Laser Structures by EBIC Measurements and Simulation
p.69
p.69
Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
p.77
p.77
Monte Carlo Simulation of the Recombination Contrast of Dislocations
p.89
p.89
Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
Abstract:
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Periodical:
Solid State Phenomena (Volumes 63-64)
Pages:
53-60
Citation:
Online since:
December 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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