Paper Titles

Charge Collection Scanning Microscopy: Non-Conventional Applications
p.1

EBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs Heterostructures
p.13

EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
p.25

Laser Induced Mapping for Separation of Bulk and Surface Recombination
p.33

Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
p.45

Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
p.53

Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
p.61

Characterization of Laser Structures by EBIC Measurements and Simulation
p.69

HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64EBIC of Strained Si/SiGe 2DEGs Showing Lateral...

EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Defects in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

25-32

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.25

Citation:

Cite this paper

Online since:

December 1998

Authors:

Carl E. Norman, N. Griffin, D.D. Arnone, D.J. Paul, M. Pepper, B. Gallas, J.M. Fernández

Keywords:

2DEG, Anti-Dots, Cyclotron Resonance, Depletion Region, EBIC, FIR, Lateral Confinement, Modulation Doping, Silicon-Germanium (SiGe), Strained Si, TEM, Virtual Substrate

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: