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Charge Collection Scanning Microscopy: Non-Conventional Applications
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EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
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Laser Induced Mapping for Separation of Bulk and Surface Recombination
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Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
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Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
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Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
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Characterization of Laser Structures by EBIC Measurements and Simulation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Charge Collection Scanning Microscopy:...

Charge Collection Scanning Microscopy: Non-Conventional Applications

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

1-12

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.1

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Online since:

December 1998

Authors:

Antonio Castaldini, Anna Cavallini

Keywords:

Defect Imaging, Electron Beam Induced Current (EBIC), Epilayer, GaAs, Gallium Nitride (GaN), Ion Beam Induced Current (IBIC), Optical Beam Induced Current OBIC, Silicon

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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