Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

105-114

DOI:

10.4028/www.scientific.net/SSP.63-64.105

Citation:

K. Knobloch et al., "Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques", Solid State Phenomena, Vols. 63-64, pp. 105-114, 1998

Online since:

December 1998

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$35.00

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