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Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
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SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64SEM-EBIC Study of Defects in Epitaxial AlGaN...

SEM-EBIC Study of Defects in Epitaxial AlGaN Layers

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

131-138

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.131

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Online since:

December 1998

Authors:

G.N. Panin, O.V. Kononenko, V.N. Matveev, Eugene B. Yakimov, Oliver Ambacher

Keywords:

AlGaN, Diffusion Length, Dislocation, EBIC, Gallium Nitride (GaN), Minority Carriers

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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