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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79The Investigation of Charge Transport Properties...

The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

395-400

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.395

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Online since:

April 2001

Authors:

Toshio Hirao, Jamie Steward Laird, H. Mori, S. Onoda, Hisayoshi Itoh

Keywords:

Collected Charge, Heavy-Ion Microbeam, Ion Induced Transient Current, Silicon-on-Insulator (SOI), Single Event Upset, Single-Event

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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