Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

377-380

DOI:

10.4028/www.scientific.net/SSP.78-79.377

Citation:

T. Isshiki et al., "Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy", Solid State Phenomena, Vols. 78-79, pp. 377-380, 2001

Online since:

April 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.