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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Characterization of Defects in 6H-Type Epitaxially...

Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

377-380

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.377

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Online since:

April 2001

Authors:

Toshiyuki Isshiki, Hiroshi Saijo, Shigehiro Nishino, M. Shiojiri

Keywords:

Cathodoluminescence, Micropipe, Planer Defect, Silicon Carbide (SiC), Surface Deformation

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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