Atomistic Simulation Study of Grain Boundaries and Dislocations in Nanoscale Semiconductors

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Periodical:

Solid State Phenomena (Volumes 80-81)

Edited by:

O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner

Pages:

231-236

DOI:

10.4028/www.scientific.net/SSP.80-81.231

Citation:

K. Masuda-Jindo et al., "Atomistic Simulation Study of Grain Boundaries and Dislocations in Nanoscale Semiconductors", Solid State Phenomena, Vols. 80-81, pp. 231-236, 2001

Online since:

November 2001

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$35.00

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