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HomeSolid State PhenomenaSolid State Phenomena Vols. 80-81Atomistic Simulation Study of Grain Boundaries and...

Atomistic Simulation Study of Grain Boundaries and Dislocations in Nanoscale Semiconductors

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Abstract:

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Polycrystalline Semiconductors VI

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Periodical:

Solid State Phenomena (Volumes 80-81)

Pages:

231-236

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.80-81.231

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Online since:

November 2001

Authors:

Kinichi Masuda-Jindo, M. Menon, R. Kikuchi

Keywords:

Dislocation, Grain Boundary, Nanocrystalline Semiconductors, Quantum Wire, TB Molecular Dynamics

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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