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HomeSolid State PhenomenaSolid State Phenomena Vols. 80-81Barrier-Controlled Transport in Highly Doped...

Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States

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Abstract:

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Polycrystalline Semiconductors VI

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Periodical:

Solid State Phenomena (Volumes 80-81)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.80-81.225

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Online since:

November 2001

Authors:

S. Brehme, P. Kanschat, T. Weis, K. Lips, W. Fuhs

Keywords:

Electron Spin Resonance, Hall-Effect, Interface States (or Traps), Microcrystalline Silicon, Mobility

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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