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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Hydrostatic Pressure Effect on Redistribution of...

Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-Implanted Silicon

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

115-120

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.115

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Online since:

November 2001

Authors:

Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, I.V. Antonova, J. Jun

Keywords:

Annealing, Hydrostatic Pressure, Implantation, Oxygen, Redistribution, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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