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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Gate-Oxide Integrity Evaluation Using Non-Ideal...

Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

735-740

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.735

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Online since:

November 2001

Authors:

Teimuraz Mchedlidze

Keywords:

Gate-Oxide Integrity, Silicon Wafer Quality Evaluation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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