Paper Titles

Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation
p.713

Effective Gettering Mechanisms in Solar Multicrystalline Materials
p.719

Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction
p.727

Gate-Oxide Integrity Evaluation Using Non-Ideal Metal-Oxide-Silicon Capacitor Structures
p.735

Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization
p.741

Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si
p.747

A Technique for Delineating Defects in Silicon
p.753

SEM Vision Periodic Defect Review and Characterization after Inter-Metal Dielectric Deposition
p.759

Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model
p.765

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Lock-In IR-Thermography – A Novel Tool for...

Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

741-746

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.741

Citation:

Cite this paper

Online since:

November 2001

Authors:

S. Huth, Otwin Breitenstein, A. Huber, D. Dantz, U. Lambert, F. Altmann

Keywords:

Defect Imaging, GOI Defects, IC-Testing, Thermography

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: