Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

765-770

DOI:

10.4028/www.scientific.net/SSP.82-84.765

Citation:

P. Petrik et al., "Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model", Solid State Phenomena, Vols. 82-84, pp. 765-770, 2002

Online since:

November 2001

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$35.00

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