Paper Titles

Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers
p.7

Wet Etch Enhancement of HfO₂ Films by Implant Processing
p.11

Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
p.15

Introduction of High-k Materials into Wet Processing, Analysis and Behavior
p.19

Metallic Impurity Contamination from Tungsten Gate Cleaning
p.23

Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning
p.27

Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy
p.33

Complexing Agents Employed in Single Chemistry Cleaning: Stability Studies Using HPLC
p.37

Stability and Residue Studies of Complexing Agents in SC-1 Bath
p.41

HomeSolid State PhenomenaSolid State Phenomena Vol. 92Metallic Impurity Contamination from Tungsten Gate...

Metallic Impurity Contamination from Tungsten Gate Cleaning

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces VI

Info:

Periodical:

Solid State Phenomena (Volume 92)

Pages:

23-26

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.23

Citation:

Cite this paper

Online since:

May 2003

Authors:

Geun Min Choi, Tadahiro Ohmi

Keywords:

Cleaning, Cross-Contamination, Metallic Impurity, Tungsten-Gate

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: