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Future Challenges for Cleaning in Advanced Microelectronics
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Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers
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Wet Etch Enhancement of HfO₂ Films by Implant Processing
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Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
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Introduction of High-k Materials into Wet Processing, Analysis and Behavior
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Metallic Impurity Contamination from Tungsten Gate Cleaning
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Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning
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Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy
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HomeSolid State PhenomenaSolid State Phenomena Vol. 92Open Circuit Potential Analysis as a Fast...

Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

7-10

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.7

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Online since:

May 2003

Authors:

Martine Claes, T. Witters, G. Loriaux, S. Van Elshocht, A. Delabie, Stefan De Gendt, Marc Heyns, Harald Okorn-Schmidt

Keywords:

High-k, Open Circuit Potential, Wet Etching

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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