Paper Titles

Wet Etch Enhancement of HfO₂ Films by Implant Processing
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Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
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Introduction of High-k Materials into Wet Processing, Analysis and Behavior
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Metallic Impurity Contamination from Tungsten Gate Cleaning
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Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning
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Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy
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Complexing Agents Employed in Single Chemistry Cleaning: Stability Studies Using HPLC
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Stability and Residue Studies of Complexing Agents in SC-1 Bath
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Single Wafer Immersion Process Incorporating a Novel Megasonics Configuration with an Advanced IPA Vapor Condensation Dry
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HomeSolid State PhenomenaSolid State Phenomena Vol. 92Single Chemistry Cleaning Solutions for Advanced...

Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning

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Abstract:

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Ultra Clean Processing of Silicon Surfaces VI

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

27-32

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.27

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Cite this paper

Online since:

May 2003

Authors:

Rita Vos, Marcel Lux, Sophia Arnauts, Karine Kenis, M. Maes, Bart Onsia, James Snow, Frank Holsteyns, Guy Vereecke, Paul W. Mertens, Marc Heyns, O. Doll, A. Fester, Bernd O. Kolbesen, T. Hackett, Mark Hoffman

Keywords:

APM, Complexing Agent, Metal Removal, SC1, Single Chemistry Clean

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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