Paper Titles

Preface Committees

Future Challenges for Cleaning in Advanced Microelectronics
p.1

Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers
p.7

Wet Etch Enhancement of HfO₂ Films by Implant Processing
p.11

Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
p.15

Introduction of High-k Materials into Wet Processing, Analysis and Behavior
p.19

Metallic Impurity Contamination from Tungsten Gate Cleaning
p.23

Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning
p.27

Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy
p.33

HomeSolid State PhenomenaSolid State Phenomena Vol. 92Future Challenges for Cleaning in Advanced...

Future Challenges for Cleaning in Advanced Microelectronics

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Ultra Clean Processing of Silicon Surfaces VI

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

1-6

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.1

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Online since:

May 2003

Authors:

Allen Bowling, Brian K. Kirkpatrick, Trace Hurd, Laura Losey, Phil Matz

Keywords:

Clustered Cleaning, New Materials Cross-Contamination Control, Porous-Low-K Cleaning, Silicon Wafer Cleaning, Single Wafer Cleaning, Surface Preparation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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