Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process

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Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

19-30

DOI:

10.4028/www.scientific.net/SSP.93.19

Citation:

T. Shiba et al., "Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process ", Solid State Phenomena, Vol. 93, pp. 19-30, 2003

Online since:

June 2003

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$35.00

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