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Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

19-30

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.19

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Online since:

June 2003

Authors:

Takeo Shiba, Mutsuko Hatano, Mieko Matsumura, Yoshiaki Toyota, Yoshiharu Tai, Makoto Ohkura, Toshio Miyazawa, Toshihiko Itoga

Keywords:

Device Degradation, Hot Carrier Stress, Liquid Crystal Display, Polycrystalline Silicon, Thin Film Transistor

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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