Paper Titles

Polycrystalline Silicon Thin-Film Transistors on Flexible Steel Foil Substrates for Complementary-Metal-Oxide-Silicon Technology
p.3

High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application
p.13

Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process
p.19

Hot Carrier Effect in Low-Temperature Poly-Silicon p-Channel Thin-Film Transistors
p.31

Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods
p.37

Reliability of Low-Temperature Poly-Si Thin-Film Transistors
p.43

Defect Control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication
p.49

Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO₄ Laser Crystallized Silicon
p.55

HomeSolid State PhenomenaSolid State Phenomena Vol. 93Hot Carrier Effect in Low-Temperature Poly-Silicon...

Hot Carrier Effect in Low-Temperature Poly-Silicon p-Channel Thin-Film Transistors

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors VII

Info:

Periodical:

Solid State Phenomena (Volume 93)

Pages:

31-36

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.31

Citation:

Cite this paper

Online since:

June 2003

Authors:

H. Nakagawa, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Y. Morita

Keywords:

Device Simulator, Hot Carriers, Polycrystalline Silicon, Reliability, Thin Film Transistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: