High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application

Joong Hyun Park; Do Young  Kim; Jae Kyung  Ko; Junsin Yi

doi:10.4028/www.scientific.net/SSP.93.13

Paper Titles

Polycrystalline Silicon Thin-Film Transistors on Flexible Steel Foil Substrates for Complementary-Metal-Oxide-Silicon Technology
p.3

High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application
p.13

Poly-Si Thin-Film Transistors Robust Against Hot-Carrier Stress and Application to Liquid Crystal Displays Fabricated by a 450°C Process
p.19

Hot Carrier Effect in Low-Temperature Poly-Silicon p-Channel Thin-Film Transistors
p.31

Polycrystalline Silicon Thin-Film Transistors Fabricated by Defect Reduction Methods
p.37

Reliability of Low-Temperature Poly-Si Thin-Film Transistors
p.43

Defect Control Process Technologies for High-Performance Polycrystalline Si Thin-Film Transistor Fabrication
p.49

Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO₄ Laser Crystallized Silicon
p.55

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High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application

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Solid State Phenomena (Volume 93)

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13-18

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https://doi.org/10.4028/www.scientific.net/SSP.93.13

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Online since:

June 2003

Authors:

Joong Hyun Park, Do Young Kim, Jae Kyung Ko, Junsin Yi

Keywords:

Crystallization, Flexible Substrate, Polycrystalline Silicon, Thin Film Transistor

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