Paper Titles

Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
p.473

Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?
p.483

Measurement of Nitrogen Concentration in Cz Silicon Crystals
p.489

Gold Diffusion as a Tool for Defect Characterization in Si
p.495

Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon
p.501

Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
p.507

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy
p.513

Investigation of Semiconductors by Nanoindentation
p.519

Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
p.527

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Infrared Transmission Investigations of Rod - Like...

Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology X

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

501-506

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.501

Citation:

Cite this paper

Online since:

September 2003

Authors:

Alexander Lawerenz, Michael Ghosh, K. Kremmer, V. Klemm, Armin Müller, Hans Joachim Möller

Keywords:

Fourier Transform Infrared Spectroscopy (FTIR), Infrared Microscopy, Multicrystalline Silicon, Silicon Nitride Precipitation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. J. Stein, Mat. Res. Soc. Symp. Proc. vol. 59: Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon (editors: S. C. Mikkelsen, Jr., S. J. Pennycook, J. W. Corbett, S. J. Pearton) (1986), p.523.

[2] A. Sassella, A. Borghesi, G. Borionetti, P. Geranzani: Mater. Sci. Eng. B 73 (2000), p.224.

[3] Y. Inomata, T. Yamane: J. Cryst. Growth 21 (1974), p.317.

[4] C. Ferrara: Kohlenstoff, Sauerstoff und Stickstoff in Silicium für Solarzellen, diploma thesis, Georg-August-Universität Göttingen (1994).