Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy

Simona Kouteva-Arguirova; Valeri I. Orlov; Winfried Seifert; Jürgen Reif; Hans Richter

doi:10.4028/www.scientific.net/SSP.95-96.513

Paper Titles

Measurement of Nitrogen Concentration in Cz Silicon Crystals
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Gold Diffusion as a Tool for Defect Characterization in Si
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Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon
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Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
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Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy
p.513

Investigation of Semiconductors by Nanoindentation
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Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
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Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
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Gettering Strategies for SOI Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Residual Stress Distribution and Silicon Phase...

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation at Different Temperatures, Studied by Means of Micro-Raman Spectroscopy

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Solid State Phenomena (Volumes 95-96)

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513-518

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https://doi.org/10.4028/www.scientific.net/SSP.95-96.513

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Online since:

September 2003

Authors:

Simona Kouteva-Arguirova, Valeri I. Orlov, Winfried Seifert, Jürgen Reif, Hans Richter

Keywords:

Indentation, Raman Spectroscopy, Silicon, Stress Distribution

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