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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Gold Diffusion as a Tool for Defect...

Gold Diffusion as a Tool for Defect Characterization in Si

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

495-500

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.495

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Online since:

September 2003

Authors:

Olga V. Feklisova, Eugene B. Yakimov

Keywords:

Extended Defects, Gold Diffusion, Grown-in Defects, Self-Interstitial, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] E. Yakimov, G. Mariani and B. Pichaud: J. Appl. Phys. Vol. 78 (1995), p.1495.

[2] E. Yakimov and I. Perichaud: Appl. Phys. Lett. Vol. 67 (1995), p. (2054).

[3] M. Jacob, P. Pichler, H. Russel and R. Falster: J. Appl. Phys. Vol. 82 (1997), p.182.

[4] C. Venezia, D.J. Eaglesham, T.E. Haynes, A. Agarwal, D.C. Jacobson, H. -J. Gossmann and F.H. Baumann: Appl. Phys. Lett. Vol. 73 (1998), p.2980.

DOI: 10.1063/1.122650

[5] D.C. Schmidt, B.G. Svensson, N. Keskitalo, S. Godey, E. Ntsoenzok, J.F. Barbot and C. Blanchard: J. Appl. Phys. Vol. 84 (1998), p.4214.

DOI: 10.1063/1.368695

[6] J.S. WiIIiams, M.J. Conway, J. Wong-Leung, P.N.K. Deenapanray, M. Petravic, B.A. Brown, D.J. Eaglesham and D.C. Jacobson: Appl. Phys. Lett. Vol. 75 (1999), p.2424.

DOI: 10.1063/1.125035

[7] I. Perichaud, E. Yakimov, S. Martinuzzi, and C. Dubois: J. Appl. Phys. Vol. 90 (2001), p.2806.

[8] A.L. Parakhonsky, E.B. Yakimov and D. Yang: Physica B: Condensed Matter. Vol. 308-310 (2001), p.396.

DOI: 10.1016/s0921-4526(01)00758-x

[9] W. Frank, U. Gösele, H. Mehrer and A. Seeger: Diffusion in Crystalline Solids (Academic, Orlando, FL 1984) p.64.

DOI: 10.1016/b978-0-12-522662-2.50007-8

[10] N. A. Stolwijk, B. J. Hölzl, W. Frank, E. R. Weber and H. Mehrer: Appl. Phys. Vol. A 39 (1986), p.37.

[11] H. Zimmermann and H. Ryssel: Appl. Phys. Vol. A 55 (1992), p.121.

[12] O. Palais, J. Gervais, E. Yakimov and S. Martinuzzi: European Phys. J., Appl. Phys. Vol. 10 (2000), p.157.

[13] S.V. Koveshnikov, E.B. Yakimov, N.A. Yarykin, V.A. Yunkin: Phys. Stat. Sol. (a) Vol. 111 (1989) p.81.

DOI: 10.1002/pssa.2211110108

[14] A. L. Parakhonsky, E. B. Yakimov and Deren Yang: J. Appl. Phys. Vol. 90 (2001) p.3642.

[15] G. Mariani, V.V. Sirotkin, B. Pichaud, E.B. Yakimov and S.I. Zaitsev: J. Phys. C: Condensed Matter. Vol. 8 (1996), p.5685.

[16] B. Pichaud, G. Mariani-Regula and E.B. Yakimov: Mater. Sci. Engineer. B Vol. 71 (2000), p.272.