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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Investigation of Semiconductors by Nanoindentation

Investigation of Semiconductors by Nanoindentation

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

519-526

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.519

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Online since:

September 2003

Authors:

Asta Richter, Bodo Wolf, Joseph BelBruno

Keywords:

Crystal Symmetry, Mechanical Hysteresis, Nanoindentation, Nanomechanical Property, Phase Transition, Scanning Force Microscopy, Semiconductor

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[8] R. Smith, D. Christopher, S.D. Kenny, A. Richter and B. Wolf, Defect Generation and Pile up of Atoms during Nanoindentation of Fe Single Crystals, Phys. Rev. B to be published (2003).

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50 100 150 200 250 300.

[1] [2] [3] [4] Load F/mN Penetration depth h/nm InSb (100) not implanted.

50 100 150 200 250 300.

[1] [2] [3] [4] Load F/mN Penetration depth h/nm InSb (100) B+ : 1014 cm-2.

50 100 150 200 250 300.

[1] [2] [3] [4] Load F/mN Penetration depth h/nm InSb (100) B+ : 1015 cm-2.

50 100 150 200 250 300.

[1] [2] [3] [4] Load F/mN Penetration depth h/nm InSb (100) B+ : 1016 cm-2.