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Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
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Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
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Gettering Strategies for SOI Wafers
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Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
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Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
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Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
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Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
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Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

553-558

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.553

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Online since:

September 2003

Authors:

Andreas Sattler, Michael Seibt, Vitaly V. Kveder, Wolfgang Schröter

Keywords:

AuG, Cobalt, Gettering, Oxygen, Precipitation, Segregation, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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