Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon

Andreas Sattler; Michael Seibt; Vitaly V. Kveder; Wolfgang Schröter

doi:10.4028/www.scientific.net/SSP.95-96.553

Paper Titles

Investigation of Semiconductors by Nanoindentation
p.519

Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
p.527

Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
p.539

Gettering Strategies for SOI Wafers
p.547

Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
p.553

Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
p.559

Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
p.565

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
p.571

Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon
p.577

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Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

553-558

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.553

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Online since:

September 2003

Authors:

Andreas Sattler, Michael Seibt, Vitaly V. Kveder, Wolfgang Schröter

Keywords:

AuG, Cobalt, Gettering, Oxygen, Precipitation, Segregation, Silicon

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References

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