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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Gettering of Oxygen onto Buried Defect Layer in...

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

571-576

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.571

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Online since:

September 2003

Authors:

A.V. Frantskevich, Anis M. Saad, A.V. Mazanik, A.K. Fedotov, E.I. Rau, S.V. Chigir

Keywords:

Gettering, Hydrogen, Implantation, Oxygen, Silicon-on-Insulator (SOI)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[25] and 50 % from their common number [13]. Also it should be noted that positions of the peaks for oxygen content curves versus sputtering time (i. e. depth) for these two samples A2 and B2 are not coincident. This fact can be due to three.

5 10 15 20 25 30.

[10] [3] [10] [4] [10] [5] (a) Si O.