Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

571-576

DOI:

10.4028/www.scientific.net/SSP.95-96.571

Citation:

A.V. Frantskevich et al., "Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing", Solid State Phenomena, Vols. 95-96, pp. 571-576, 2004

Online since:

September 2003

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$35.00

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