Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon

Peng Zhang; Andrei A. Istratov; Hele Väinölä; Eicke R. Weber

doi:10.4028/www.scientific.net/SSP.95-96.577

Paper Titles

Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
p.553

Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
p.559

Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
p.565

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
p.571

Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon
p.577

Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency
p.581

Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering
p.587

Internal Gettering Efficiency in p/p⁺ and p/p^- Silicon Epistructures
p.593

Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level
p.599

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Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon

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Solid State Phenomena (Volumes 95-96)

Pages:

577-580

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.577

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Online since:

September 2003

Authors:

Peng Zhang, Andrei A. Istratov, Hele Väinölä, Eicke R. Weber

Keywords:

Dissolution, Gettering, Iron, Oxide Precipitates, Thermal Stability

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References

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