Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation

Pavel Hazdra; Jan Vobecký

doi:10.4028/www.scientific.net/SSP.95-96.559

Paper Titles

Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
p.527

Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
p.539

Gettering Strategies for SOI Wafers
p.547

Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
p.553

Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation
p.559

Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
p.565

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
p.571

Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon
p.577

Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency
p.581

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Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

559-564

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.559

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Online since:

September 2003

Authors:

Pavel Hazdra, Jan Vobecký

Keywords:

Gettering, Helium, Ion Implantation, Lifetime Control, Platinum, Silicon

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References

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