Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities

Article Preview

Abstract:

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

539-546

Citation:

Online since:

September 2003

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] T. Y. Tan, E. E. Granner, and Tice, Appl. Phys. Lett., 30 (1977), p.175.

Google Scholar

[2] F. Shimura and H. Tsuya, J. Electrochem. Soc., 129 (1982), p.1062.

Google Scholar

[3] D. Gilles and E. R. Weber, S. Hahn, Phys. Rev. Lett., 64 (1990), p.196.

Google Scholar

[4] M. B. Shabani, T. Yoshimi, S. Okuuchi, T. Shingyoji, and F. G. Kirscht, in Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II, B. O. Kolbesen, C. Claeys, P. Stallhofer, and F. Tardiff, Editors, PV 92-22, p.318, The Electrochemical Society Proceedings, NJ (1997).

Google Scholar

[5] S. Sadamitsu, S, Ogushi, Y. Koike, N. Reilly, T. Nagashima, S. Sano and H. Tsuya, Solid State Phenomena, 57-58 (Gadest 97), (1997), p.53.

DOI: 10.4028/www.scientific.net/ssp.57-58.53

Google Scholar

[6] H. Hieslmair, A. A. Istrotov, S. A. McHugo, C. Flink, T. Heiser, E. R. Weber, Appl. Phys. Lett., 72 (1998), p.1460.

DOI: 10.1063/1.120592

Google Scholar

[7] K. Sueoka, S. Sadamitsu, Y. Koike, T. Kihara, and N. Katahama, J. Electrochem. Soc., 147 (2000), p.3074.

DOI: 10.1149/1.1393857

Google Scholar

[8] F. G. Kirscht, M. B. Shabani, Solid State Phenomena, 82-84 (Gadest 2001), (2002), p.367.

Google Scholar

[9] S. Isomae, H. Ishida, T. Itoga, and K. Hozawa, J. Electrochem. Soc., 149 (2002), p. G343.

DOI: 10.1149/1.1475694

Google Scholar

[10] L. K. J. Vandamme, E. P. Vandamme, and J. J. Dobbelsteen, Solid-State Electron, 41 (1997), p.901.

Google Scholar

[11] H. H. Busta and H. A. Waggener, J. Electrochem. Soc., 124 1997), p.1424.

Google Scholar

[12] M. Aoki, T. Itakura, and N. Sasaki, Appl. Phys. Lett., 66 (1995), p.2709.

Google Scholar

[13] R. Hoelzl, D. Huber, K. J. Range, L. Fabry, J. Hage, R. Wahlich, J. Electrochem. Soc., 147 (2000), p.2704.

DOI: 10.1149/1.1393593

Google Scholar

[14] M. B. Shabani, Y. Shiina, Y. Shimanuki, F. G. Kirscht, Solid State Phenomena, 82-84 (Gadest 2001), (2002), p.331.

Google Scholar

[15] A. A. Istratov, W. Huber, E. R. Weber, J. Electrochem. Soc., 150 (2003), p. G253.

Google Scholar

[16] M. B. Shabani, H. Suga, M. Fukuda, K. Miyomoto and Y. Sayama, Extended Abstract 1 D 06, 54 meeting of The Japan Society of Analytical Chemistry, Gunma (1993) 299.

Google Scholar

[17] M. B. Shabani, T. Yoshimi H. Abe, M. Fukuda, and Y. Sayama, Abstract 396 The Electrochemical Society, Vol. 94-2 Florida, (1994) 608.

Google Scholar

[18] M. B. Shabani, T. Yoshimi S. Okuuchi and H. Abe, Solid State Phenomena, 57-58 (Gadest 97), (1997) 81.

Google Scholar

[19] N. Machida, H. Furuya, Y. Horioka, and J. G. Park, in Proceeding of the Forum on the Science and Technology of Silicon Materials 2001, Editors, H. Yamada-Kaneda and K. Sumino, 26-28 (2001) p.348.

Google Scholar

[20] J.G. Park, K. Kurita, G.S. Lee, S.A. Shin and H. Furuya, Microelectronic Engineering, 66 (2003), p.247.

Google Scholar

[21] R. Falster and V. V. Voronkov, Mater. Sci. Eng., B, 73 (2000), p.87.

Google Scholar

[22] M. B. Shabani, T. Yoshimi and ,H. Abe, J. Electrochem. Soc., 143 (1996) (2025).

Google Scholar

[23] M. B. Shabani, S. Okuuchi and Y. Shimanuki, in Analytical and Diagnostic Techniques for Semiconductor Materials Devices, and Processes B. O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardiff, J. Benton, T. J. Shaffner, D, Schroder, S. Kishino, P. Rai-Choudhury, Editors, PV 99-16 The Electrochem. Soc., Proceeding Series, Pennington, NJ, (1999).

Google Scholar