Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

539-546

DOI:

10.4028/www.scientific.net/SSP.95-96.539

Citation:

M. B. Shabani et al., "Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities", Solid State Phenomena, Vols. 95-96, pp. 539-546, 2004

Online since:

September 2003

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$35.00

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